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Post-release stress-engineering of surface-micromachined MEMS structures using evaporated Chromium and in-situ fabricated reconfigurable shadow masks

机译:使用蒸发的铬和原位制造的可重构阴影掩模对表面微加工MEMS结构进行释放后应力工程

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We present a novel post-release stress-engineering process that can provide out-of-plane curvature to initially planar MEMS structures. This process uses a layer of evaporated Chromium (Cr) with intrinsic compressive stress to provide the required curvature. The stressor layer is applied post-release, and is patterned using shadow masks fabricated in-situ as part of the surface micromachining fabrication process. The masks can be reconfigured to provide variable stressor layer coverage of the underlying structures without the use of photolithography. A model is presented that encompasses the increase in deflection, and thus non-uniform chromium coverage, during the stress-engineering of released structures.
机译:我们提出了一种新颖的释放后应力工程工艺,该工艺可以为最初的平面MEMS结构提供平面外的曲率。此过程使用具有固有压缩应力的蒸发铬(Cr)层来提供所需的曲率。应力源层是在释放后施加的,并使用作为表面微加工制造过程一部分的就地制造的荫罩进行构图。可以将掩模重新配置为在不使用光刻的情况下提供对下层结构的可变应力源层覆盖。提出了一个模型,该模型包含在释放结构的应力工程过程中挠度的增加以及因此铬覆盖率不均匀的问题。

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