Using time dependent perturbation technique, Stark shift and self-energy correction in semiconductor quantum dot are studied. The analytical results are obtained by incorporating the important excitonic and biexcitonic effects. The numerical estimations are made for potentially important II-VI semiconductor quantum dot CdS of size smaller than the bulk exciton Bohr radius. The demonstration of analytical and numerical result predicts a red shift of $Delta@E/3 with $Delta@E being the biexciton binding energy. The Stark shift and self energy correction are found to have higher amplitudes at high excitation intensities due to the presence of biexcitons.
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机译:使用时间依赖性扰动技术,研究了半导体量子点中的STARK移位和自能校正。通过掺入重要的激子和Biexcitonic效应来获得分析结果。数值估计对于尺寸小于散装激子BoHR半径的潜在重要的II-VI半导体量子点CD。分析和数值结果的演示预测$ Delta @ E / 3的红色偏移,其中$ Delta @ E是Biexciton绑定能量。由于Biexcitons的存在,发现在高激发强度下存在狭窄的偏移和自能校正。
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