Analysis of period-doubling bifurcation and chaos using physics-based SiC diode model

摘要

SiC diode is more attractively and potentially used in high voltage and high frequency field compared with ordinary diode. The research on SiC diode focuses on the model and analysis of the volt-ampere characteristics. While on the study of chaos, most of previous research has used a silicon diode with the simplified equivalent circuit model. In this paper, a physics-based model of a SiC diode is used in the driven Resistor-Inductor-Diode (RLD) series circuit to study the nonlinear behaviors. Fourier series solution is used for solving the am-bipolar diffusion equation (ADE) in lightly doped drift region. Numerical results show that its route to chaos through period doubling or bifurcation and we can obtain the ranges of the driven voltage frequency and amplitude for the onset of chaos in the RLD circuits.