Direct integrated strain sensors for robust temperature behaviour

摘要

We have investigated the fundamental behavior of strain sensitive transistors with respect to different transistor parameters. Therefore, the transistors have been simulated by using a modified BSIM3.3 model. The simulations showed an increase of drain current between 3.5 % and 5.8 % at 60 MPa stress, an acceptable shift of threshold voltage, and almost no increase of leakage current. For basic characterization, pressure sensitive silicon membranes have been fabricated as strain inducing elements. Measurements with elongated membranes confirmed the simulation results regarding the transistor parameters and the robust temperature behaviour.