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The design of RF front-end chip for typhoon monitoring radiometer

机译:台风监测辐射计射频前端芯片的设计

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The paper presents the design and performance of a V-band radiometer MMIC with 0.1μm GaAs pHEMT technology. The circuit includes a frequency double LO chain and a resistive mixer. The resistive mixer with balance structure topology can improve the image-rejection ratio. Compared with other mixers, the sub-harmonic mixer can achieve high isolation. The typical isolation measured between LO to RF is almost 60dB. The measured conversion loss of the mixer is from 13dB to 15dB over RF frequency 50-60GHz. The bandwidth of IF reaches 1 GHz. The circuit also exhibits very good phase difference between I/Q within 90 ± 6°. The completed mixer show 25dB image-rejection ratio (IRR) over the whole band.
机译:本文介绍了采用0.1μmGaAs pHEMT技术的V波段辐射计MMIC的设计和性能。该电路包括一个双倍频率本振链和一个电阻混频器。具有平衡结构拓扑的电阻混合器可以提高镜像抑制比。与其他混频器相比,次谐波混频器可以实现较高的隔离度。 LO与RF之间测得的典型隔离度几乎为60dB。在50-60GHz的RF频率下,测得的混频器的转换损耗为13dB至15dB。 IF的带宽达到1 GHz。该电路还在90±6°范围内的I / Q之间表现出非常好的相位差。完整的混频器在整个频段上显示出25dB的镜像抑制比(IRR)。

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