Electrical simulator for devices based on quantum dot arrays

摘要

We present an electron transport simulator to describe the electronic transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. It is based on the non-coherent rate equations and the local potential are computed within the self-consistent field regime. The method underlying the electrical transport model depends only on fundamental material parameters and the geometrical description of the system creating a simulator tool capable to describe realistic devices based on quantum dots. Two specific prototypical devices, an arbitrary array of QDs embedded in a matrix insulator and a transistor device based on QDs, are used to illustrate the kind of unique insight these numerical simulations can provide.