Donor/acceptor and adsorbate effects over transport properties of Graphene Armchair Nanoribbon/MoS2 device

摘要

Sensing properties and quasi conductivity of Graphene Armchair Nanoribbon/MoS heterostructure devices are investigated using Non Equilibrium Green's Function (NEGF) formalism. Both metallic and semiconducting Armchair Graphene Nanoribbon (A-GNR) are used as sensing medium, while two dimensional (2D) molybdenum disulfide (MoS) is used as contacts. A comparative study about sensing performance of NH adsorbed pristine-, defect-, doped GNR and unadsorbed GNR has been carried out. The non-linear spin dependent transport properties of such devices have been studied on the basis of doping with an atom of group III & V elements. The effects of applied gate voltage over sensing properties have been observed extensively. Also in this literature, the effects of metal contacts are discussed and a new device model has been proposed to increase sensing properties.