MOSFET; avalanche breakdown; insulated gate bipolar transistors; IGBT devices; post-failure behaviour; repetitive avalanche conditions; series connected string; single-chip MOSFET; Insulated gate bipolar transistors; Junctions; Logic gates; MOSFET; Reliability; Silicon carbide; Switches; Breakdown; Device characterisation; Fault tolerance; IGBT; MOSFET; Power semiconductor device; Reliability;
机译:单芯片IGBT和COOLMOS器件在重复短路条件下的实验行为
机译:在未钳位的电感开关条件下功率MOSFET和IGBT的动态雪崩行为
机译:SiC MOSFET和Si IGBT的单脉冲雪崩失效研究
机译:由于重复雪崩之后,单芯片MOSFET和IGBT器件的操作:与行业合作的大学
机译:两级栅极驱动方案,用于功率MOSFET和IGBT的无故障工作。
机译:荷兰大学与产业合作的动机机构和组织
机译:SiC功率MOSFET的单脉冲雪崩鲁棒性和重复应力老化