Designing of p-AlxGa1−xN/AlyGa1−yN super lattice structure as the p-contact and transparent layer in AlGaN UVLEDs

摘要

A series of the p-AlGaN/AlGaN super lattice structure has been examined as the p-contact and transparent layer for different ultra-violet light emitting diode (UVLED) with a self-consistent 1D Poisson and Schrödinger solver. The optimized condition for different UV wavelength has been found for UVLED for 223 nm to 355 nm. By calculating the absorption coefficient of the SL structure, we confirmed that the proper SL structure has the enormous potential of being used in AlGaN UVLEDs.