Investigation of the influence of duty cycle on the vanadium oxide thin film thermistor deposited by pulsed dc reactvie magnetron sputtering

摘要

Vanadium oxide (VOx) thin films were deposited using the pulsed dc reactive magnetron sputtering technique. The duty cycle of the pulsed power was found can be used to affect the reaction between the vanadium and oxygen and to tune the electrical properties of VOx. Depending on the influence of duty cycle on the composition, these VOx thin film thermistors showed room temperature resistivity in the range of 0.005 Ω-cm to 3.573 Ω-cm. The activation energy and thermistor constant are in the range of 0.016-0.188eV and 188-2182 K, respectively.