Role of oxygen vacancies on the resistive switching characteristics of MIM structures fabricated a low temperature

摘要

In this work, we present a comparison in the resistive switching characteristics of MIM structures fabricated a low temperature having different concentration of oxygen vacancies. We find that, the forming voltage and conduction window of memory devices are improved by using a stack with oxygen-deficient/rich zones inside the dielectric. Then we propose a MIM structure that can be vertically integrated into a CMOS-based BEOL processing.