A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1017-Cycle Endurance

摘要

We have developed a ferroelectric RAM (FRAM) with a low operation voltage of 1.2 V and a high switching endurance up to 1017 cycles. Our newly developed triple-protection structured cell array, has constructed without an additional mask step, effectively protects 0.4-μm ferroelectric capacitors from hydrogen and moisture degradation. We have designed our capacitor-over-bit-line (COB) structure to have a small cell size of 0.5 μm.