Comparative analysis of carbon nanotube field effect transistors

摘要

This paper presents the design, performance evaluation and comparative analysis of different types of Carbon Nanotube Field Effect Transistor (CNTFET). Different CNTFET namely Schottky Barrier, Partially gated, Conventional, and Tunnel CNTFET are simulated using NanoTCAD ViDES. The simulation results are presented and devices have been compared on the basis of different parameters i.e. ION/IOFF ratio, transconductance, inverse subthreshold slope. It has been found that Conventional gives the highest ION/IOFF ratio, Tunnel and Partial gated gives steep inverse subthreshold slope but Tunnel benefits with well controlled OFF state. Partial gated gives highest transconductance.