Impact of common source inductance on switching loss of SiC MOSFET

摘要

Common source inductance is a critical issue in power electronics, especially when devices switch at high frequency. Development of SiC MOSFETs allows fast switching commutation. In order to fully utilize their ability in high frequency application, the impact of common source inductance on the switching loss should be explored. This paper proposes a method to experimentally study the influence of common source inductance on switching loss of SiC MOSFET. The switching loss is calculated by measuring the device junction temperature and calibrating thermal resistance from the SiC chip to the heatsink. ZVS soft switch method is used to separate the turn on and turn off losses by comparing the switching loss and substituting the turn off loss. A 1kW/800V output all-SiC boost DC-DC converter is built to accomplish the study.