antimony compounds; germanium compounds; grain boundaries; grain size; hopping conduction; nanostructured materials; terahertz wave spectra; THz conductivity; THz spectra; fitting experimental spectra; grain boundaries; hopping conduction; intragrain motion; microscopic model; nanogranular semiconductor; nanosized grains; nonDrude conductivity; phase-change materials; Conductivity; Grain size; Microscopy; Phase change materials; Semiconductor device modeling; Tunneling;
机译:太赫兹和直流损耗以及相变材料结晶态中非德鲁赫太赫兹电导率的起源
机译:评论“纳米材料中非德鲁赫太赫兹电导率的起源”物理来吧100,132102(2012)]
机译:对“关于“纳米材料中非德鲁赫太赫兹电导率的起源”的评论”的回应物理来吧102,096101(2013)]
机译:纳米半导体THz光谱中的非磨牙电导率的起源
机译:窄带太赫兹脉冲的产生以及半导体量子阱中超快现象的太赫兹研究。
机译:半导体中限制电导率的双极热导率
机译:(III,mn)V铁磁半导体的非德鲁德光学导电性