Metal routing induced burn out in GGNMOS ESD protection for low-power DRAM application

摘要

With high I/O numbers in low-power DRAM technology, ESD design is limited by on-chip metal routing. An unusual burn out pattern in GGNMOS is found. Failure is driven by metal induced joule heating. Metal routing restriction in GGNMOS is discussed and design guidance is set for low-power DRAM design.