A non-typical latch-up event on HV ESD protection

机译：HV ESD保护的非典型闩锁事件

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An unexpected non-typical latch-up phenomenon from HV pad instead of power supply is discovered. Although there are double guard rings and the spacing between anode and cathode of SCR is long, the holding voltage is still extremely low. The key factors of the failed case are well studied by TCAD and solution is proposed.

机译：发现从HV焊盘而不是电源出现了意外的非典型闩锁现象。尽管有双保护环并且SCR的阳极和阴极之间的间隔很长，但是保持电压仍然非常低。 TCAD对失败案例的关键因素进行了深入研究，并提出了解决方案。

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《Electrical Overstress/Electrostatic Discharge Symposium》|2014年|1-6|共6页
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作者
Wang Shih-Yu; Hao-Chan Huang; Chieh-Wei He; Yao-Wen Chang; Tao-Cheng Lu; Kuang-Chao Chen; Chih-Yuan Lu;
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关键词
Capacitors; Cathodes; Electrostatic discharges; Integrated circuits; Lead; MOS devices; Thyristors;

机译：电容器;阴极;静电放电;集成电路;引线; MOS器件;晶闸管;

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机译：具有嵌入式载波复合结构的新型高保持电压SCR，具有闩锁免疫和鲁棒的ESD保护功能
2. Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency [J] . Tremouilles D., Bafleur M., Bertrand G., IEEE Journal of Solid-State Circuits . 2004,第10期

机译：闭环设计指南，以提高静电放电（ESD）保护方案的效率
3. LVTSCR structures for latch-up free ESD protection of BiCMOS RF circuits [J] . V. Vashchenko, A. Concannon, M. ter Beek, Microelectronics & Reliability . 2003,第1期

机译：LVTSCR结构用于BiCMOS RF电路的无闩锁ESD保护
4. Solving ESD protection latch-up guard ring issues during electrostatic discharge (ESD) events [C] . Tremouilles, D., Bafleur, . 2003

机译：解决静电释放（ESD）事件期间的ESD保护闩锁保护环问题
5. ESDCat: A new CAD software package for full-chip ESD protection circuit design verification. [D] . Zhan, Rouying. 2005

机译：ESDCat：一种新的CAD软件包，用于全芯片ESD保护电路设计验证。
6. Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection [O] . Zhuo Wang, Zhao Qi, Longfei Liang, 2019

机译：具有嵌入式载流子复合结构的新型高保持电压SCR可实现闩锁免疫和强大的ESD保护
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A non-typical latch-up event on HV ESD protection

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