ESD characterization of Germanium diodes

摘要

Germanium (Ge) as a high mobility channel material is an option for future PMOSFET for sub 14 nm node. This work presents the ESD robustness of planar Ge diodes on Silicon-on-Insulator (SOI) and bulk Si substrate. They show a reduced It2 with a remarkably improved clamping behavior compared to Si diodes, which is attributed to the intrinsic material properties of Germanium.