APPLICATION OF CATALYTIC PHOSPHORUS DOPING TO a-Si/c-Si HETEROJUNCTION SOLAR CELLS

摘要

Phosphorus (P) catalytic doping (Cat-doping), realized by exposing c-Si surface to radicals generated by catalytically cracking PH_3 molecules, is applied to amorphous silicon (a-Si)/crystalline silicon (c-Si) heterojunction solar cells. A thin n-type layer created by the P Cat-doping improves surface recombination velocity (SRV), caused by its field effect. A heterojunction solar cell receiving P Cat-doping demonstrates better open-circuit voltage (V_(oc)) than a heterojunction cell with no P Cat-doping. This indicates the applicability of Cat-doping to a-Si/c-Si heterojunction solar cells, resulting from the advantage of the Cat-doping which can be performed at less than 200 °C.