ULTIMATE OPEN-CIRCUIT VOLTAGE OF THE SILICON SOLAR CELLS

摘要

The theory of photovoltaic effect in structures n~+-p-p~+ (or p~+-n-n~+ ) under conditions of nonlinear photoresponse is developed and a method is proposed for definition of open-circuit voltage of solar cells based on the semiconductors of silicon type suitable at any level of photoinjection.The paper consider structures in which a layer of semiconductor base (p or n-type) at uniform irradiation is a current generating region. These structures contain very thin highly-doped surface layers, n~+ and p~+.The paper investigates dependencies of open-circuit voltage on the base doping level and on charge carrier generation intensity at various mechanisms of carrier recombination are investigated.