Sheet resistance measurements of highly resistive interfacial layers in photovoltaic TCO thin films

摘要

Transparent conductive oxide (TCO) layers for modem thin-film photovoltaic modules consist of several layers with different electric resistivity. In particular, SnO_2-based TCOs exhibit a low resistive, consisting of an F-doped base layer (FTO) and a highly resistive interfacial layer. These interfacial layers are subject to process-induced degradation, which limits the performance of the thin film solar cell by modification of the specific resistance of the highly resistive interfacial layer between absorber material and FTO. This paper presents a method to measure the resistivity of the highly resistive interfacial layer by a modified transfer-length measurement (TLM).