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Simulation analysis on reducing the electric field stress at the triple junctions on the insulator surface of the high voltage vacuum interrupters

机译:降低高压真空灭弧室的三结点及绝缘子表面电场应力的仿真分析

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Surface flashovers that are initiated from the triple junctions in vacuum interrupters can restrict their overall performance of vacuum's solid insulation especially for the voltage ranges of 72.5 kV and above. This has to be taken into account for the insulation coordination of vacuum interrupters. A basic model of a 72.5 kV vacuum interrupter was simulated in order to study the electric field stress at the outside edge of the metal shield, at the triple junctions and on the surface of the insulator. The high field stress at the outer edge of the metal grading shields can be reduced by using external field grading rings. But when it comes to triple junctions where the initiating event of inner surface flashover takes place and the insulator surface where the secondary electron emission takes place, there are many factors that influence the field stress at these regions. In this paper, some of those factors are simulated in ANSYS Maxwell 2D and observed the electric field distribution at the critical areas. One of those factors that influence the field stress at the triple junctions is the shape of the insulator. Different shapes of the ceramic insulator especially at the point of contact with metal shield are simulated. And another factor that influences the field distribution at the triple junction area is the implementation of metal inserts with different heights at the both ends of the insulator. Their influences on the field distribution are simulated. On the other hand, spraying of electrons from the metal shields under high field stress on to the insulator surface may lead to charge accumulation and cause secondary electron emission. So the metal shield curvature is optimized in order to reduce the field stress on its surface.
机译:由真空灭弧室中的三重结引发的表面闪络可能会限制其真空固体绝缘的整体性能,特别是对于72.5 kV及以上的电压范围。真空灭弧室的绝缘配合必须考虑到这一点。模拟了一个72.5 kV真空灭弧室的基本模型,以研究金属屏蔽层的外边缘,三重结和绝缘子表面上的电场应力。通过使用外部场分级环,可以降低金属分级屏蔽层外边缘的高场应力。但是,当涉及发生内表面飞弧引发事件和发生二次电子发射的绝缘体表面的三重结时,有许多因素会影响这些区域的场应力。在本文中,其中一些因素在ANSYS Maxwell 2D中进行了模拟,并观察了关键区域的电场分布。影响三重结处的场应力的那些因素之一是绝缘体的形状。模拟了陶瓷绝缘子的不同形状,尤其是在与金属屏蔽层接触的地方。影响三重结区的场分布的另一个因素是在绝缘体两端使用不同高度的金属插件。模拟了它们对场分布的影响。另一方面,电子在高场应力作用下从金属屏蔽层喷到绝缘体表面会导致电荷积聚并引起二次电子发射。因此,优化了金属屏蔽的曲率,以减少其表面上的场应力。

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