2.4kV GaN Polarization Superjunction Schottky Barrier Diodes on semi-insulating 6H-SiC substrate

摘要

This paper reports the performance and electrical characterization results of high voltage Polarization Superjunction (PSJ) GaN Schottky Barrier Diodes (SBD) on semi-insulating 6H-SiC substrate for the first time. Fabricated PSJ SBDs with drift length of 25 μm show low on-set voltage of ∼ 0.4V, high reverse blocking voltage (VBR) of ∼ 2400V, specific on-state resistance (RON.A) of ∼ 14 mΩ.cm2 and a Power Device Figure of Merit (PDFOM = VBR2/RON.A) of ∼ 400 MW/cm2.