Electro-thermal co-simulation of two parallel-connected SiC-MOSFETs under thermally-imbalanced conditions

摘要

This paper describes electro-thermal co-simulation of two parallel-connected SiC-MOSFETs using a temperature-dependent compact model for a discrete SiC-MOSFET. The temperature-dependent compact model is constructed on the basis of the previous model with appropriate-modification of output characteristics and threshold voltage. This compact model also gives the accurate reproducibility of the transient waveforms in a high region of drain current. The current sharing simulation between the parallel-connected SiC-MOSFETs under thermally-imbalanced conditions is experimentally verified. Based on the above verification, the electro-thermal co-simulation in a boost chopper is conducted, which successfully shows the junction temperature distribution between the two SiC-MOSFETs.