A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode

摘要

A fast Thvenin equivalent model for IGBT considering the dynamic performance of both IGBT and antiparallel diode based on datasheet is proposed to increase the efficiency of power electronics transient simulation. In this paper, the conducting details of an IGBT with antiparallel diode switch are represented by a fixed topology equivalent: a voltage source in series with a constant resistance. For the first time, three devices are intergrated inside one model, and the conducting device is dynamically alternative among three statuses: IGBT, diode and open circuit, reflected in the changeable voltage source. So unchangeable admittance matrix is gained despite of the variation of conducting devices, which tremendously accelerates the calculation. A single phase half-bridge inverter circuit is tested applying the proposed model, and its accuracy and efficiency are validated.