A new GaAs power switching device, the gFET™ switch was introduced at APEC 2013. This paper describes devices developed since APEC 2013 including depletion mode devices with nominal on resistances of 7, 14 and 40 MΩ as well as an enhancement mode device with a nominal on resistance of 40 MΩ. The enhancement mode device is particularly well suited for use as a control switch in buck converters. The paper also describes the development of SPICE models from the experimental data.
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