90°C CW Operation of 1.3-μm Wavelength npn-AlGaInAs/InP Transistor Lasers by Thick and Wide Base-Electrode

机译：90°C CW操作1.3-μm波长NPN-AlGainAS / InP晶体管激光器由厚宽且宽的基电极

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摘要

In order to improve lasing characteristics of 1.3-μm wavelength transistor lasers, device structure was changed by focusing on optical confinement and heat dissipation. As the results, the highest continuous-wave operation temperature up to 90 °C was obtained for the first time.

机译：为了提高波长晶体管激光器的激光特性，通过专注于光学限制和散热来改变装置结构。结果，首次获得最高连续波操作温度高达90℃。

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《IEEE International Semiconductor Laser Conference》|2018年|248p|共2页
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作者
Shoichi Yoshitomi; Kentaro Yamanaka; Yusei Goto; Nobuhiko Nishiyama; Shigehisa Arai;
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中图分类 TN365-53;
关键词
Transistors; Modulation; Cavity resonators; Semiconductor lasers; Heating systems; Masers;

机译：晶体管;调制;腔谐振器;半导体激光器;加热系统;用具;

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专利

1. Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3-$mu{rm m}$ Wavelength [J] . Sato N., Shirao M., Sato T., Photonics Technology Letters, IEEE . 2013,第8期

机译：波长为1.3-nform的npn-AlGaInAs晶体管激光器在室温下的连续波操作- $ mu {rm m} $ 波长
2. Continuous wave operation up to 90°C of npn-AlGaInAs/InP transistor laser [J] . Shoichi YOSHITOMI, Kentaro YAMANAKA, Yusei GOTO, 電子情報通信学会技術研究報告. 光エレクトロニクス. Optoelectronics . 2018,第348期

机译：连续波操作高达90°C的NPN-AlGainAs / InP晶体管激光器
3. Continuous wave operation up to 90°C of npn-AlGaInAs/InP transistor laser [J] . Shoichi YOSHITOMI, Kentaro YAMANAKA, Yusei GOTO, 電子情報通信学会技術研究報告. レ-ザ·量子エレクトロニクス. Lasers and Quantum Electronics . 2018,第349期

机译：连续波操作高达90°C的NPN-AlGainAs / InP晶体管激光器
4. 90°C CW Operation of 1.3-μm Wavelength npn-AlGaInAs/InP Transistor Lasers by Thick and Wide Base-Electrode [C] . Shoichi Yoshitomi, Kentaro Yamanaka, Yusei Goto, International Semiconductor Laser Conference . 2018

机译：厚和宽基极电极对1.3μm波长的npn-AlGaInAs / InP晶体管激光器的90°CW操作
5. InAlGaAs/InP Light Emitting Transistors and Transistor Lasers Operating Near 1.55 microm. [D] . Huang, Yong. 2010

机译：InAlGaAs / InP发光晶体管和晶体管激光器工作在1.55微米附近。
6. Extracting more light for vertical emission: high power continuous wave operation of 1.3-μm quantum-dot photonic-crystal surface-emitting laser based on a flat band [O] . Huan-Yu Lu, Si-Cong Tian, Cun-Zhu Tong, 2019

机译：提取更多光以进行垂直发射：基于平坦带的1.3μm量子点光子晶体表面发射激光器的大功率连续波操作
7. Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions [O] . Masashi Yukinari, Noriaki Sato, Nobuhiko Nishiyama, 2014

机译：各种操作条件下1.3微米NPN-AlGainas / InP晶体管激光器的光谱特性
8. High-Temperature cw Operation of GaInAs/InP Lasers Emitting at 1.5 micrometers [R] . Hsieh, J. J. 1980

机译：GaInas / Inp激光器的高温cw操作发射1.5微米

90°C CW Operation of 1.3-μm Wavelength npn-AlGaInAs/InP Transistor Lasers by Thick and Wide Base-Electrode

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