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Latest performance of GaN-based nonpolar/semipolar emitting devices

机译:GaN的非极性/半极性发光装置的最新性能

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High Efficient GaN-based blue &green nonpolar/semipolar LEDs and laser diodes were developed with an advantage of much smaller piezoelectric field, and non-isotropic strain to change the energy band structures. (20-2-1) semipolar LEDs were fabricated. The spectrum width of those LEDs is much narrower than that of conventional c-pain and other semipolar/nonpolar LEDs. The blue-shift of the peak emission wavelength of (20-2-1) LEDs is almost negligible in comparison with that of the conventional c-plain and other semipolar/nonpolar LEDs. (20-2-1), (20-21) and nonpolar blue&green laser diodes were fabricated.
机译:高效的GaN基蓝色和绿色非极性/半极性LED和激光二极管是具有大大较小压电场的优点,并且不上各各向同性应变改变能带结构。 (20-2-1)制造了Semipolar LED。这些LED的光谱宽度比传统的C疼痛和其他半极/非极性LED的光谱宽度要窄得多。与传统的C-Plap和其他半极/非极性LED的相比,(20-2-1)LED的峰值发射波长的蓝色移位几乎可以忽略不计。 (20-2-1),(20-21)和非极性蓝色和绿色激光二极管被制成。

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