Room-temperature continuous-wave operation of a 1.3-#x03BC;m npn-AlGaInAs/InP transistor laser

机译：室温连续波操作1.3微米NPN-AlGainas / InP晶体管激光器

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A room-temperature continuous-wave operation of a 1.3-μm npn-AlGaInAs/InP transistor laser was demonstrated for the first time. The threshold current and external differential efficiency were 39 mA and 13%, respectively, under common base configuration.

机译：首次对1.3微米NPN-Algainas / InP晶体管激光器进行了一个室温连续波操作。在共同的基础配置下，阈值电流和外部差分效率分别为39 mA和13％。

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《IEEE International Semiconductor Laser Conference》|2012年||共2页
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Sato Noriaki; Shirao Mizuki; Sato Takashi; Yukinari Masashi; Nishiyama Nobuhiko; Amemiya Tomohiro; Arai Shigehisa;
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1. Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3-$mu{rm m}$ Wavelength [J] . Sato N., Shirao M., Sato T., Photonics Technology Letters, IEEE . 2013,第8期

机译：波长为1.3-nform的npn-AlGaInAs晶体管激光器在室温下的连续波操作- $ mu {rm m} $ 波长
2. Continuous wave operation up to 90°C of npn-AlGaInAs/InP transistor laser [J] . Shoichi YOSHITOMI, Kentaro YAMANAKA, Yusei GOTO, 電子情報通信学会技術研究報告. 光エレクトロニクス. Optoelectronics . 2018,第348期

机译：连续波操作高达90°C的NPN-AlGainAs / InP晶体管激光器
3. Continuous wave operation up to 90°C of npn-AlGaInAs/InP transistor laser [J] . Shoichi YOSHITOMI, Kentaro YAMANAKA, Yusei GOTO, 電子情報通信学会技術研究報告. レ-ザ·量子エレクトロニクス. Lasers and Quantum Electronics . 2018,第349期

机译：连续波操作高达90°C的NPN-AlGainAs / InP晶体管激光器
4. Room-temperature continuous-wave operation of a 1.3-#x03BC;m npn-AlGaInAs/InP transistor laser [C] . Sato Noriaki, Shirao Mizuki, Sato Takashi, 2012 23rd IEEE International Semiconductor Laser Conference. . 2012

机译：1.3μmnpn-AlGaInAs / InP晶体管激光器的室温连续波工作
5. Room-temperature, continuous-wave quantum cascade lasers in the first and second atmospheric windows. [D] . Liu, Zhijun. 2008

机译：在第一和第二大气窗口中的室温连续波量子级联激光器。
6. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si [O] . Yi Sun, Kun Zhou, Meixin Feng, 2018

机译：直接在Si上生长的室温连续波电泵浦InGaN / GaN量子阱蓝色激光二极管
7. Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions [O] . Masashi Yukinari, Noriaki Sato, Nobuhiko Nishiyama, 2014

机译：各种操作条件下1.3微米NPN-AlGainas / InP晶体管激光器的光谱特性
8. Continuous-wave operation of InAsSb/InP quantum - dot lasers near 2 (mu)m at room temperature [R] . Qiu, Yueming, Uhl, David, Keo, Sam 2004

机译：Inassb / Inp量子点激光器在室温下接近2（μm）的连续波操作

Room-temperature continuous-wave operation of a 1.3-#x03BC;m npn-AlGaInAs/InP transistor laser

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