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On Handling Memory Scan Chains

机译:处理记忆扫描链

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Memories from the Library vendor come as a hard macro in the design. With the increased focus on meeting timing requirements, memories are provided in an integrated form from vendor. These integrated memory hard macros not only consist of SRAM read-write behavior but also comprise of scan chains and bypass logic around SRAM. This bypass logic consists of shadow cells which are already stitched into small scan chains inside the hard macro. Since this whole memory bypass and shadow logic is inside hard macro, it can be treated as a separate timing closed module in the design. Because of the separate timing closure process, there can be an occurrence of timing violation during silicon test on the logic interface between the SoC and the hard macro. There is a need to have an optional mode where designer should have freedom to generate the patterns with or without consideration of the capture mode of the memory scan cells. In this paper, we present a methodology to handle memory scan chains by controlling the memory clock during capture, using a combination of control signals which already exist in the design.
机译:图书馆供应商的回忆作为设计中的硬宏。随着对满足时序要求的重点增加,记忆以供应商的综合形式提供。这些集成内存硬宏不仅包括SRAM读写行为,还包括SRAM周围的扫描链和旁路逻辑。该旁路逻辑由阴影单元组成,暗影单元已经缝合到硬宏内的小扫描链中。由于这种整个内存旁路和影子逻辑位于硬宏中,因此可以将其视为设计中的单独定时关闭模块。由于单独的定时闭合过程,在SOC和硬宏之间的逻辑接口上可能存在定时违规。需要具有可选模式,设计者应该具有自由度来生成具有或不考虑存储器扫描单元的捕获模式的模式。在本文中,我们使用设计中已经存在的控制信号的组合来介绍通过控制捕获期间的存储器时钟来处理存储器扫描链的方法。

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