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Rethinking the approach to higher 450mm process gas flows: A case study

机译:重新思考提高450mm工艺气体流量的方法:案例研究

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The impending increase in silicon wafer diameter from 300mm (the current industry norm) to 450mm will increase the surface area of each wafer by 2.25 times. A worst-case scenario suggests that flammable process gas flow rates required to maintain wafer throughput at acceptable levels would increase by the same scaling factor driving up to 3 times the abatement requirement. The main reason to go to a 450mm wafer size is to lower manufacturing costs, so we need to explore how to best minimize the downstream impact of higher gas flow rates on capital and operating expenditure of tool-support equipment such as vacuum pumps and gas abatement systems, as well as increased subfab space requirements. This paper will consider the likely impact and trade-offs of such gas flow increases on process vacuum systems, which under a “business as usual” model would scale up purge and equipment sizes based on safety multipliers. A case study alternative considers an integrated vacuum and abatement system with a common supervisory control system and monitored joints, allowing purge nitrogen flows and equipment sizes to be reduced, and operational safety to be maintained. Both the technical and cost implications are thoroughly considered. There is an opportunity to enable 450mm capabilities by leveraging novel integration of known technologies to mitigate increased process gas flows.
机译:硅晶片直径即将从300mm(当前行业标准)增加到450mm,这将使每个晶片的表面积增加2.25倍。最坏的情况表明,将晶圆产量保持在可接受水平所需的易燃工艺气体流速将因相同的比例因子而增加,从而驱动减排量达到3倍。采用450mm晶圆尺寸的主要原因是降低制造成本,因此我们需要探索如何最大程度地降低较高气体流量对工具支持设备(如真空泵和气体减排)的资本和运营支出的下游影响系统,以及增加的子工厂空间需求。本文将考虑此类气体流量增加对过程真空系统的可能影响和折衷,在“一切照旧”模式下,该过程将基于安全系数来扩大吹扫和设备规模。一个案例研究替代方案考虑了一个集成的真空和减排系统,该系统具有通用的监督控制系统和受监控的接头,可以减少吹扫氮气流量和设备尺寸,并保持操作安全性。彻底考虑了技术和成本方面的影响。通过利用已知技术的新颖集成来减轻工艺气体流量的增加,有机会实现450mm的能力。

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