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Systematic methods to identify and verify non-visible defects in silicon substrate

机译:识别和验证硅基板中不可见缺陷的系统方法

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For failure analysis, most of defects are visible to imaging tools, such as OM, SEM, FIB, TEM etc. However, there are still lots of non-visible defects which cannot be caught by these tools. As complexity for such non-visible defect failure analysis is much high, FA engineers were often puzzled where to begin from. Two such cases were presented in this paper with solutions. The systematic methods for these cases include electrical data mining, brainstorming or fish-bone diagram method to list all failure possibilities, and then proper characterization tools or methods were used to identify and verify the hypotheses. Finally DOE (design of experiments) was used to verify the root cause. As a result, phosphorus contamination was found for embedded Flash products' MOS threshold voltage shift issue, and higher substrate oxygen concentration for Power MOS products source to drain low breakdown voltage issue.
机译:对于故障分析,大多数缺陷对于成像工具都是可见的,例如OM,SEM,FIB,TEM等。但是,仍然存在许多看不见的缺陷,这些工具无法捕获这些缺陷。由于此类不可见缺陷故障分析的复杂性很高,因此FA工程师常常感到困惑,从何开始。本文提出了两个这样的案例并给出了解决方案。这些情况的系统方法包括电气数据挖掘,集思广益或鱼骨图方法以列出所有故障可能性,然后使用适当的表征工具或方法来识别和验证假设。最后,使用DOE(实验设计)来验证根本原因。结果,发现嵌入式Flash产品的MOS阈值电压偏移问题存在磷污染,而Power MOS产品源的低氧浓度问题导致了较低的击穿电压问题。

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