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A robust chip capacitor for video band width in RF power amplifiers

机译:用于射频功率放大器中视频带宽的坚固型片状电容器

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Year 2013 demonstrated a considerable manufacturing challenges to enable the roll out of RF 4G systems. The popularity of utilizing the High chip capacitor for increased VBW tested the resources for both RF assembly in Freescale and the chip manufacturer and subcontractors associated with chip capacitor production. It was demonstrated that the existing chip capacitor device, while designed well, required several enhancements to increase final product assembly quality while reducing the significant CLC footprint. The initial chip capacitor design utilized a standardized ceramic build process needed plating format which in the long run contributed to chip shorting at final assembly due to the existing chip capacitor prone to get solder short and supplier not able to provide consistent solder pattern. To remedy this design, the chip cap processing was radically redefined to produce a chip cap with reverse electrodes and an in-house solder foil process. To date, the new capacitor has been introduced in over a dozen RF products and is being utilized in significant run rates to produce the higher margins needed in this competitive environment.
机译:2013年证明了要实现RF 4G系统推出所面临的巨大制造挑战。利用高贴片电容器来增加VBW的普及测试了飞思卡尔RF组件以及与芯片电容器生产相关的芯片制造商和分包商的资源。事实证明,现有的贴片电容器器件虽然设计合理,但仍需要进行一些增强,以提高最终产品的组装质量,同时减少大量的CLC占地面积。最初的贴片电容器设计采用了标准化的陶瓷构建工艺,该电镀工艺需要电镀格式,从长远来看,由于现有的贴片电容器容易造成焊锡短路并且供应商无法提供一致的焊锡图案,因此从长远来看会导致最终组装时的芯片短路。为了纠正这种设计,彻底重新定义了芯片盖工艺,以生产带有反向电极的芯片盖和内部焊料箔工艺。迄今为止,新电容器已在十几种射频产品中投入使用,并以极高的运行速度加以利用,以在竞争激烈的环境中产生更高的利润。

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