Immunity test of RF MEMS of non uniform test radiation techniques

摘要

This work presents the immunity test of radiation techniques in terms of near fields. The simulation results of the electromagnetic aspects of the proposed test are given by the commercial software Computer Simulation Technology Microwave Studio (CST-MWS) based on finite integration technique (FIT) method. The immunity test results are performed in the both states (OFF and ON switch) in the frequency range between 1 and 40 GHz. The treated parameters for this test are insertion loss, return loss, E fields and H fields. The simulation results of the immunity test for RF MEMS capacitive given in different position of the electric probe. The obtained results show that the immunity of the component is according to the wavelength λ, the frequency f, the position of electric probe and the state of the component.