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Intra- and inter-chip voltage droop analysis using a power delivery grid model

机译:使用电源电网模型进行芯片和芯片间电压下垂分析

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Connection of power supply for chips and cores is a complex model. Due to both the physical structure of the silicon and the temporal workload, significant voltage variation can be observed at the power grid. Especially, voltage droop can be severe and causes problems, such as signal propagation delay or even faults. Thorough understanding about the cause of voltage droop may give a more reliable prediction on how the power supply varied so the power can be utilized effectively. In this paper, an intra- and inter-chip power delivery model is developed and is used for analyzing the voltage droop with different cores and tasks scheduled. This multi-chip power grid model is an extension from the single chip model and is capable for integrating intra- and interchip networks. To verify the design, we can simulate the synthetic current workloads using SPICE. Based on this model, we can outline that the voltage droop, which can be reduced significantly when the tasks are scheduled with spatial and temporal changes.
机译:芯片和芯的电源连接是一个复杂的模型。由于硅的物理结构和时间工作量的两个,可以在电网上观察到显着的电压变化。特别是,电压下垂可能是严重的并且导致问题,例如信号传播延迟甚至断层。彻底地了解电压下垂的原因可以给出对电源如何变化的更可靠的预测,从而可以有效地利用电源。在本文中,开发了一种和芯片间电力输送模型,用于分析具有不同核和调度的任务的电压下降。该多芯片电网模型是来自单芯片模型的扩展,并且能够集成内部和Interchip网络。要验证设计,我们可以使用Spice模拟合成电流工作负载。基于此模型,我们可以概述电压下降,当任务安排空间和时间变化时,可以显着降低。

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