Simulation of Broadband Microwave Oscillations in the Gunn-Diode Sources Involving Impact Ionization

摘要

The model for numerical simulation of the Gunn diode with electric field strength sufficient for the development of the impact ionization in the moving high-field domains is described and some results are presented. The form of the current oscillations and frequency spectra is in good agreement with experimentally measured data. It is shown that the Gunn diode operating under conditions of the impact ionization may be used as a source of wide-band oscillations.