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A compact 5#x2013;6 GHz T/R module based on SiGe BiCMOS and SOI that enhances 256 QAM 802.11ac WLAN radio front-end designs

机译:基于SiGe BiCMOS和SOI的紧凑型5-6 GHz T / R模块,可增强256 QAM 802.11ac WLAN无线电前端设计

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A compact high linearity 4.9–5.9 GHz T/R FEM is presented, which consists of a SiGe BiCMOS PA and a SOI switched LNA realized in an ultra-compact 2.3 × 2.3 × 0.33 mm3 QFN package. The Tx chain has > 30 dB gain and meets −35 dB DEVM up to 17 dBm at 3.3 V and 20 dBm at 5V, insensitive to modulation bandwidths and transmission data length up to 4 mS. With digital pre-distortion (DPD), the PA can be down-biased to save 30 mA while maintaining its linearity. The Rx chain features <2.5 dB NF and 12 dB gain with 4 dBm IIP3 and 8 dB bypass attenuator with 29 dBm IIP3. All the unique features enhance the front-end circuit designs of complex 802.11ac radios.
机译:提出了紧凑的高线性度4.9–5.9 GHz T / R FEM,它由SiGe BiCMOS PA和SOI开关LNA组成,采用超紧凑型2.3×2.3×0.33 mm3 QFN封装。 Tx链具有> 30 dB的增益,并在3.3 V时达到高达-17 dBm的−35 dB DEVM,在5V时达到20 dBm,对调制带宽和高达4 mS的传输数据长度不敏感。借助数字预失真(DPD),可以对PA进行下偏置,以节省30 mA的电流,同时保持其线性度。 Rx链具有<2.5 dB的NF和12 dB的增益(4 dBm IIP3)和8 dB旁路衰减器(29 dBm IIP3)。所有这些独特功能都增强了复杂802.11ac无线电的前端电路设计。

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