Comparative Study of Ballistic Transport in Si and GaAs Using Non Equilibrium Green's Function Formalism

摘要

This paper demonstrates a comparative study of Silicon (Si) and Gallium Arsenide (GaAs) in Double Gate Silicon -- on-Insulator (DGSOI) MOSFET, where electrons, when held in a quantum well, are ballistic ally transported from source to drain. Different parameters like Density of States (DOS), current voltage (IV) characteristics and exchange correlation effects are compared and discussed using Non Equilibrium Green s' Function (NEGF) formulation.