Single event transients in PDSOI CMOS inverter chain irradiated by pulsed laser

摘要

Single event transient (SET) issues become a primary concern in modern CMOS logic circuits. The possibility of soft errors due to the propagation of SETs is increasing, and becomes a significant reliability challenge. In this paper, single event transients in a 100 series 0.18 μm partially-depleted Silicon-On-Insulator (PDSOI) CMOS inverter chain are studied by pulsed laser. Through experiment, the propagation-induced pulse broadening (PIPB) effect is observed. PIPB is mainly caused by float-body-induced threshold voltage hysteresis in PDSOI transistors. And, it is found that SET pulses don't reach rail-to-rail swings, because of voltage dividing between internal resistance of oscilloscope and on resistance of PMOSFET.