InGaAs Complementary metal-oxide-semiconductor fabricated on GaAs Substrate using Al2O3 as gate oxide

摘要

In this paper, an InGaAs buried channel PMOS and an InGaAs surface channel NMOS have been fabricated on GaAs substrate. A gate length of 20 um InGaAs PMOS shows a maximum drain current of 3 mA/mm, peaks of transconductor of 0.8 mS/mm. A gate length of 20 um InGaAs surface channel NMOS shows a maximum drain current of 11 mA/mm and peaks of transconductor of 9 mS/mm. The surface channel InGaAs MOSFETs show mobility of 750 cm/Vs, and the InGaAs pMOSFETs show effective channel mobility of 180 cm/Vs.