Pixel design optimization of CMOS image sensor with large dynamic range and high charge transfer efficiency

摘要

The pixel design of CMOS image sensor with large dynamic range of 71dB and high charge transfer efficiency by simulation is presented. The electron transfer efficiency of 100% can be obtained, which means all the electrons induced by illumination can be transferred to the floating drain. The influence of gate length and photodiode location on charge transfer efficiency and dynamic range is investigated in this paper.