A GaN Schottky Diode-based analog phase shifter MMIC

摘要

A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode characteristics were used for evaluating the phase-shifter performance in view of its potential for robust power operation. The phase shifter presents analog phase shifting capability up to 45° with ~ 7 dB insertion loss and a maximum VSWR of 2:1 in the 32 to 38 GHz range. Good power handling capability and robust performance is demonstrated through large signal analysis and experimental characterization.