Transition from A-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen

摘要

Series of a-SiN:H thin films similar in thickness (380 ± 10 nm) and a-Si:H/a-SiN multi-layered films (515 ± 20 nm) were prepared by PECVD technology from silane mixed with argon (90 % Ar/10 % SiH4) on Corning Eagle 2000 glass, SiO and silicon substrates. Deposition of thin films was carried out on a Samco PD 220 NA PECVD system. Multi-layered films were consequently annealed at high temperatures (700-1100°C) in order to obtain silicon nanocrystals embedded in a dielectric matrix suitable for photovoltaic and photonic applications. X-ray diffraction, Raman and FTIR spectroscopies, TEM, SEM, UV Vis spectrophotometry and spectroscopic ellipsometry were used for the evaluation of material properties of the films.