Modified Hamming Codes to Enhance Short Burst Error Detection in Semiconductor Memories (Short Paper)

摘要

Error correction codes are used in semiconductor memories to protect information against errors. Simple error correction codes are preferred due to their low redundancy and encoding/decoding latency. Hamming codes are simple and can be easily built for any word length. They only allow single error correction, so a multiple error can lead to a wrong decoding. Multiple errors often manifest as burst errors, and they are becoming more frequent as integration scale increases. This paper proposes modified Hamming codes, with the same redundancy and coverage as the original versions, but adding short burst error detection. Three code examples, with different error correction and detection capabilities, are presented. They are especially well-suited for memories, where the length of the data word is commonly a power of 2, and low redundancy and fast and simple encoder and decoder circuits are required.