A High Efficiency Machining Method of SiC: Ion-enhanced Atmospheric Pressure Plasma Machining

摘要

An ion-enhanced atmospheric pressure plasma machining (IAPPM) method is introduced to improve the processing efficiency of SiC. The argon inductively coupled plasma is generated in designed the IAPPM machine. SF_6 chosen as the reactive gas is injected into the argon plasma where SF_6 is broken down into fluorine radicals. The reactive atoms are delivered onto the surface of SiC, and SiF_4 is generated which is exhausted in the gaseous form. The material removal rate is increased by bringing in the energetic ions bombardment. Three linear trenches were etched onto the S-SiC sample. The etch rate is 3μm/min. The surface becomes rough after the IAPPM process.