Spin control and manipulation in (111) GaAs quantum wells

摘要

The control of spin dephasing is an essential requirement for quantum information processing using electron spins in Ⅲ-Ⅴ semiconductors. GaAs quantum wells grown along the non-conventional [111] crystallographic direction are particularly interesting for spintronics due to the long spin lifetimes, which can be electrically controlled. Here, we show electron spin dynamics in (111) quantum wells by combining spatially-resolved with time-resolved photoluminescence measurements. The latter allows us to experimentally demonstrate the field induced enhancement of the spin lifetime as well as the transport of spin over several micrometers along the quantum well plane.