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Quantization and reliability-aware iterative majority-logic decoding algorithm for LDPC code in TLC NAND flash memory

机译:TLC NAND闪存中LDPC代码的量化和可靠性感知迭代多数逻辑解码算法

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Multi-level per cell (MLC) /Triple-Level per cell (TLC) technique significantly improves storage density with low cost increases, which stores more than one bit per cell, but also drastically decreases reliability in NAND flash memory. As the bit number per cell increases, correspondingly cell-to-cell interference (CCI) becomes the major challenge for NAND flash memory technology scaling. Recently, low-density parity-check (LDPC) code is considered as the most appropriate scheme of next generation Error Correcting Code (ECC) in NAND flash memory. In this paper, by exploiting the intra-cell characteristics in TLC NAND flash memory channels, a low-complexity quantization and reliability-Aware iterative majority-logic decoding (QR-IMLGD) algorithm for LDPC code is proposed to reduce the memory read latency and effectively improve the throughput of LDPC decoding. The proposed algorithm takes advantage of highly unequal error probability of input log-likelihood-ratios (LLRs) in the same cells, employ small bit-level quantizer and update only less reliable variable nodes that are initiated with higher error probability LLR values. Simulation results show that the proposed QR-IMLGD algorithm can yield a noticeable improvement in decoding convergence rate without compromising the error performance in TLC NAND flash memory channels.
机译:每个单元(MLC)/三级(TLC)技术多级(MLC)/三级(TLC)技术显着提高了低成本增加的储存密度,其每块电池存储多于一位,但也大大降低了NAND​​闪存中的可靠性。随着每个单元的位数增加,相应的细胞到小区干扰(CCI)成为NAND闪存技术缩放的主要挑战。最近,低密度奇偶校验(LDPC)代码被认为是NAND闪存中的下一代误差校正代码(ECC)的最合适方案。在本文中,通过在TLC NAND闪存通道利用小区内的特性,低复杂度量化和可靠性感知迭代多数逻辑解码(QR-IMLGD)算法的LDPC码被提出了减少存储器中读出的等待时间和有效提高LDPC解码的吞吐量。所提出的算法利用了同一小区中输入对数似然 - 比率(LLR)的高度不等误差概率,采用小比特级别化器,并仅更新具有更高误差概率LLR值的可靠可变节点。仿真结果表明,所提出的QR-IMLGD算法可以在不影响TLC NAND闪存通道中的错误性能的情况下产生解码收敛速率的明显改善。

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