Semiconductor nanowire field-effect transistors: towards high-frequency THz detectors

摘要

We report about fabrication and characterization of semiconductor nanowire-based field effect transistor deviceswhich can act as detectors for electromagnetic radiation in the THz frequency range. The detection mechanismis based on the nonlinear transfer characteristic of the transistor, which is used to realize signal rectification; thesmall capacitance related to the nanowire small cross section is beneficial in allowing a good device sensitivityup to 1.5 THz at room temperature. Due to the extreme flexibility with which semiconductor nanowires can begrown, we discuss how the basic, homogeneous InAs or InSb nanowire FETs can be improved to realize smarterdevices and functionalities.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.