A High Performance Room Temperature THz Sensor

摘要

Resonant THz antenna-coupled micro-bolometers are considered as a potential candidates for room temperature THz imaging, as well as spectroscopic applications. Micromachining technology is found to be well-suitable to fabricate a micro-meter bolometer sensor suitable for MEMS implementation. The sensitivity of the sensor is determined to be up to 1000V/W and the noise equivalent power (NEP) - is down to 5pW /VHz. The sensor parameters are designed to be easily implemented with a low cost standard preamplifier array which increases the pixel sensitivity to 10~6V/W without compromising the noise equivalent power.