Statistical modeling of electrochemical metallization memory cells

摘要

Redox-based resistive switching devices have attracted great interest for future nonvolatile memory application. The electrochemical metallization memory (ECM) cell is one variant of these devices. One issue is the variability of the resistive switching in ECM cells. Thus, statistical models that capture the variability of ECM cells are required to enable circuit design. This works presents a statistical model for the resistive switching in ECM cells that is based on the electrochemical driven growth and dissolution of a metallic filament. The simulation results are validated using experimental data.